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Bedienung und Modellierung des MOS-Transistors, Tsividis, Yannis Buch

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Artikelzustand
Sehr gut: Buch, das nicht neu aussieht und gelesen wurde, sich aber in einem hervorragenden Zustand ...
ISBN
9780195170146

Über dieses Produkt

Product Identifiers

Publisher
Oxford University Press, Incorporated
ISBN-10
0195170148
ISBN-13
9780195170146
eBay Product ID (ePID)
4422564

Product Key Features

Number of Pages
640 Pages
Publication Name
Operation and Modeling of the Mos Transistor
Language
English
Subject
Software Development & Engineering / General, Engineering (General), Programming / Object Oriented
Publication Year
2003
Features
Revised
Type
Textbook
Subject Area
Computers, Technology & Engineering
Author
Yannis Tsividis
Format
Hardcover

Dimensions

Item Height
1.4 in
Item Weight
41.3 Oz
Item Length
7.7 in
Item Width
9.6 in

Additional Product Features

Edition Number
2
Intended Audience
College Audience
Dewey Edition
21
Illustrated
Yes
Dewey Decimal
621.3815/284
Edition Description
Revised edition
Synopsis
Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor , has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips. KEY FEATURES BLUnified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise. BLExpanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications. BLNew chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them. BLExtensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided., This is a textbook for advanced semiconductor and microelectronic chip design course that follow the course where Allen/Holberg is used. It provides unified treatment of the operation and modelling of the MOS transistor., Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips. KEY FEATURES .Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise. .Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications. .New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them. .Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided.", Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips.KEY FEATURESBLUnified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise.BLExpanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications.BLNew chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them.BLExtensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided.

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