Solid State Electronic Devices von Sanjay Banerjee und Ben Streetman (2005,...
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eBay-Artikelnr.:365854008438
Artikelmerkmale
- Artikelzustand
- ISBN
- 9780131497269
Über dieses Produkt
Product Identifiers
Publisher
Prentice Hall PTR
ISBN-10
013149726X
ISBN-13
9780131497269
eBay Product ID (ePID)
16038293714
Product Key Features
Number of Pages
608 Pages
Language
English
Publication Name
Solid State Electronic Devices
Publication Year
2005
Subject
Electronics / Solid State, Electronics / General
Features
Revised
Type
Textbook
Subject Area
Technology & Engineering
Format
Hardcover
Dimensions
Item Height
3.9 in
Item Weight
3.5 Oz
Item Length
3.9 in
Item Width
3.9 in
Additional Product Features
Edition Number
6
Intended Audience
College Audience
LCCN
2006-272508
Dewey Edition
23
Illustrated
Yes
Dewey Decimal
621.3815/2
Table Of Content
1 CRYSTAL PROPERTIES AND GROWTH OF SEMICONDUCTORS. Semiconductor Materials. Periodic Structures. Crystal Lattices. Cubic Lattices. Planes and Directions. The Diamond Lattice. Bulk Crystal Growth. Starting Materials. Growth of Single Crystal Ingots. Wafers. Doping. Epitaxial Growth. Lattice Matching in Epitaxial Growth. Vapor-Phase Epitaxy. Molecular Beam Epitaxy. 2 ATOMS AND ELECTRONS. Introduction to Physical Models. Experimental Observations. The Photoelectric Effect. Atomic Spectra. The Bohr Model. Quantum Mechanics. Probability and the Uncertainty Principle. The Schrdinger Wave Equation. Potential Well Problem. Tunneling. Atomic Structure and the Periodic Table. The Hydrogen Atom. The Periodic Table. 3 ENERGY BANDS AND CHARGE CARRIERS IN SEMICONDUCTORS. Bonding Forces and Energy Bands in Solids. Bonding Forces in Solids. Energy Bands. Metals, Semiconductors, and Insulators. Direct and Indirect Semiconductors. Variation of Energy Bands with Alloy Composition. Charge Carriers in Semiconductors. Electrons and Holes. Effective Mass. Intrinsic Material. Extrinsic Material. Electrons and Holes in Quantum Wells. Carrier Concentrations. The Fermi Level. Electron and Hole Concentrations at Equilibrium. Temperature Dependence of Carrier Concentrations. Compensation and Space Charge Neutrality. Drift of Carriers in Electric and Magnetic Fields. Conductivity and Mobility. Drift and Resistance. EFFECTS OF TEMPERATURE AND DOPING ON MOBILITY. High-Field Effects. The Hall Effect. Invariance of the Fermi Level at Equilibrium. 4 EXCESS CARRIERS IN SEMICONDUCTORS. Optical Absorption. Luminescence. Photoluminescence. Electroluminescence. Carrier Lifetime and Photoconductivity. Direct Recombination of Electrons and Holes. Indirect Recombination; Trapping. Steady State Carrier Generation; Quasi-Fermi Levels. Photoconductive Devices. Diffusion of Carriers. Diffusion Processes. Diffusion and Drift of Carriers; Built-in Fields. Diffusion and Recombination; The Continuity Equation. Steady State Carrier Injection; Diffusion Length. The Haynes-Shockley Experiment. Gradients in the Quasi-Fermi Levels. 5 JUNCTIONS. Fabrication of p-n Junctions. Thermal Oxidation. Diffusion. Rapid Thermal Processing. Ion Implantation. Chemical Vapor Deposition (CVD). Photolithography. Etching. Metallization. Equilibrium Conditions. The Contact Potential. Equilibrium Fermi Levels. Space Charge at a Junction. Forward- and Reverse-Biased Junctions; Steady State Conditions. Qualitative Description of Current Flow at a Junction. Carrier Injection. Reverse Bias. Reverse-Bias Breakdown. Zener Breakdown. Avalanche Breakdown. Rectifiers. The Breakdown Diode. Transient and A-C Conditions. Time Variation of Stored Charge. Reverse Recovery Transient. Switching Diodes. Capacitance of p-n Junctions. The Varactor Diode. Deviations from the Simple Theory. Effects of Contact Potential on Carrier Injection. Recombination and Generation in the Transition Region. Ohmic Losses. GRADED JUNCTIONS. Metal-Semiconductor Junctions. Schottky Barriers. Rectifying Contacts. Ohmic Contacts. Typical Schottky Barriers. Heterojunctions. 6 FIELD-EFFECT TRANSISTORS. Transistor Operation. The Load Line. Amplification and Switching. The Junction FET. Pinch-off and Saturation. Gate Control. Current-Voltage Characteristics. The Metal-Semiconductor FET. The GaAs MESFET. The High Electron Mobility Transistor (HEMT). Short Channel Effects. The Metal-Insulator-Semiconductor FET. Basic Operation and Fabrication. The Ideal MOS Capacitor. Effects of Real Surfaces. Threshold Voltage. MOS Capacitance-Voltage Analysis. Time-dependent Capacitance Measurements. Current-Voltage Characteristics of MOS Gate Oxides. The MOS Field-Effect Transistor. Output Characteristics. Transfer Characteristics. Mobility Models. Short Channel MOSFET I-V Ch
Edition Description
Revised edition
Synopsis
For undergraduate electrical engineering students or for practicing engineers and scientists, interested in updating their understanding of modern electronics. One of the most widely used introductory books on semiconductor materials, physics, devices and technology, this text aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications., Dystocia or failure to progress in labor is the main reason for cesarean deliveries. The second edition of this successful text focuses on simple non-invasive interventions to prevent or treat difficult labor. It describes positions, movements and techniques based on principles of anatomy, physiology and psychology of childbirth. The Labor Progress Handbook is organized by stage of labor for easy reference, enabling the care giver to quickly identify appropriate low cost, low risk interventions and treat dystocia effectively, at an early stage before it becomes severe. The new edition has been thoroughly revised and updated and includes a new chapter on assessing progress in labor, together with new sections on managing labor pain, normal labor and additional positions and maneuvers. The rationale for all techniques is included based on the authors' clinical experience and wherever possible on the underlying evidence base. * New edition of essential resource for anyone caring for women in labor * Brings Together a wealth of evidence-based information and clinical expertise * 'Focuses on non-invasive techniques to assist the progress of labor * Emphasis on maternal comfort, support and safety * Encourages thoughtful, evidence-based diagnosis and intervention * Contains clear and simple illustrations, which complement the text From Reviews: 'The focus of support, position, maternal comfort, and safety is one that should be used by anyone caring for laboring women. It encourages thoughtful diagnosis and intervention in an ordered and sensible manner.' --Journal of Perinatal and Neonatal Nursing (on the first edition)
LC Classification Number
TK7871.85
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