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eBay-Artikelnr.:403798478505
Artikelmerkmale
- Artikelzustand
- Publication Date
- 1995-06-30
- Pages
- 381
- ISBN
- 9780792395485
- Subject Area
- Technology & Engineering, Science
- Publication Name
- Electrical Characterization of Silicon-On-Insulator Materials and Devices
- Publisher
- Springer
- Item Length
- 9.3 in
- Subject
- Electronics / Semiconductors, Electrical, Materials Science / Electronic Materials, Chemistry / General
- Publication Year
- 1995
- Series
- The Springer International Series in Engineering and Computer Science Ser.
- Type
- Textbook
- Format
- Hardcover
- Language
- English
- Item Weight
- 57.1 Oz
- Item Width
- 6.1 in
- Number of Pages
- Xv, 381 Pages
Über dieses Produkt
Product Identifiers
Publisher
Springer
ISBN-10
0792395484
ISBN-13
9780792395485
eBay Product ID (ePID)
895602
Product Key Features
Number of Pages
Xv, 381 Pages
Language
English
Publication Name
Electrical Characterization of Silicon-On-Insulator Materials and Devices
Publication Year
1995
Subject
Electronics / Semiconductors, Electrical, Materials Science / Electronic Materials, Chemistry / General
Type
Textbook
Subject Area
Technology & Engineering, Science
Series
The Springer International Series in Engineering and Computer Science Ser.
Format
Hardcover
Dimensions
Item Weight
57.1 Oz
Item Length
9.3 in
Item Width
6.1 in
Additional Product Features
Intended Audience
Scholarly & Professional
LCCN
94-043971
Dewey Edition
20
Series Volume Number
305
Number of Volumes
1 vol.
Illustrated
Yes
Dewey Decimal
621.3815/2
Table Of Content
Preface.- 1 Introduction.- 1.1 Why SOI ?.- 1.2 Why Not Yet SOI ?.- 1.3 Why an SOI Book?.- 2 Methods of Forming SOI Wafers.- 2.1 SIMOX.- 2.2 Wafer Bonding.- 2.3 Zone-Melting Recrystallization.- 2.4 Epitaxial Lateral Overgrowth.- 2.5 Full Isolation by Porous Oxidized Silicon.- 2.6 Silicon on Sapphire.- 2.7 Silicon on Zirconia.- 3 SOI Devices.- 3.1 Advanced CMOS and Bipolar Devices.- 3.2 Radiation-Hardened Circuits.- 3.3 High-Voltage Devices.- 3.4 High-Temperature Devices.- 3.5 Low-Power Applications.- 3.6 Three-Dimensional Devices.- 3.7 Transducers.- 3.8 Innovative Devices.- 4 Wafer-Screening Techniques.- 4.1 The Basis for Wafer Screening.- 4.2 Surface Photovoltage.- 4.3 Dual-Beam S-Polarized Reflectance.- 4.4 Dual-Beam Optical Modulation.- 4.5 Other Optical Methods.- 4.6 Point Contact Pseudo-MOS Transistor.- 4.7 Quick-Turnaround Capacitance.- 4.8 Pinhole Detection.- 4.9 Conclusion.- 5 Transport Measurements.- 5.1 Four-Point Probe.- 5.2 Spreading Resistance.- 5.3 Hall Effect and Magnetoresistance.- 5.4 Van der Pauw Measurements.- 5.5 Photoconductivity.- 5.6 PICTS.- 6 SIS Capacitor-Based Characterization Techniques.- 6.1 Capacitance and Conductance Techniques.- 6.2 Bias-Scan DLTS Technique.- 6.4 Zerbst Method and Generation Lifetime.- 6.5 MOS Capacitance Method.- 7 Diode Measurements.- 7.1 Current--Voltage Measurements in a P--N Diode.- 7.2 Differential Current/Capacitance Method.- 7.3 Gated-Diode Measurements.- 7.4 Deep-Level Transient Spectroscopy.- 8 Electrical Characterization of SOI Materials and Devices MOS Transistor Characteristics.- 9 Transistor-Based Characterization Techniques.- List of Symbols.
Synopsis
Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu- siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri- butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy., Electrical Characterization of Silicon-on-Insulator Materials and Devices describes a wide variety of electrical characterization methods, from wafer screening and defect identification to detailed device evaluation. Each technique comes with pertinent technical information -- experimental set-up, basic models, parameter extraction -- that can be immediately useful to the reader. Electrical Characterization of Silicon-on-Insulator Materials and Devices provides a comprehensive and accessible treatment of all aspects of the latest SOI technologies, including material synthesis, device physics, characterization, circuit applications, and reliability issues. Both the academic researchers and engineers working on the SOI technology will find this book invaluable as a source of pertinent scientific information, practical details, and references. For people planning to enter the SOI field, this book offers a unique coverage of the SOI technology and an attractive presentation of the underlying concepts. This book may also be used as a graduate level textbook for students who wish to learn more about the physics, applications, and electrical characterization of SOI devices., Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
LC Classification Number
TK1-9971
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